With this Funding Opportunity Announcement (FOA), the Department of Energy (DOE) SunShot Initiative is soliciting collaborative research teams to define and fabricate model systems that utilize a single p-n junction device structure and have the potential to approach Shockley-Queisser power conversion efficiency limits (for a chosen bandgap and absorber material). The emphasis of this FOA is assembling cohesive and highly diverse teams of experts within and outside the PV community who can achieve the goals of creating a model system concept and a subsequent device that can approach theoretical limits. DOE SunShot anticipates significant collaboration between experts in fundamental materials, characterization, device physics, ab-initio simulations, and PV device integration to adequately address these issues.
Overview Webinar: The Webinar mentioned in the FOA was held on February 22nd, 2013 from 3:00pm to 5:00pm Eastern Standard Time.
The Webinar script and slides are provided in the FOA Documents section below.